| PART |
Description |
Maker |
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| FU-318SAP- FU-318SAP-M6 FU-318AP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND 铟镓砷APD的模块长波段
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NR4500CP-CC NR4500BP-CC |
InGaAs APD WITH INTERNAL PREAMPLIFIER IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATIONS
InGaAs APD with internal preamplifier for 2.5 Gb/s applications. With SC-UPC connector. Flat mount flang.
InGaAs APD with internal preamplifier for 2.5 Gb/s applications. With SC-UPC connector. Vertical flang.
|
CEL[California Eastern Labs]
NEC
|
| S8550 |
Si APD array
|
Hamamatsu Corporation
|
| NR4510UT |
InGaAs APD RECEIVER
|
CEL
|
| AD1900-8TO |
APD with 3 mm2 active area
|
Sensortechnics GmbH
|
| AD500-8 |
APD with 0.2 mm2 active area
|
Sensortechnics GmbH
|
| AD500-12SMD |
APD with 0.2 mm2 active area
|
Sensortechnics GmbH
|
| FRM5N141GW |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| AD500-9.5SMD |
APD with 0.2 mm2 active area
|
Sensortechnics GmbH
|
| S9251-10 S9251-15 S9251-02 S9251-05 S9251 |
Si APD High sensitivity in near IR range
|
Hamamatsu Corporation
|
| LT3571 LT3571-15 |
75V DC/DC Converter for APD Bias
|
Linear Technology
|
